Structural study of chemical vapor deposition of Si on GaN

We have grown high quality Si epilayers on wurtzite gallium nitride substrate by low-pressure chemical vapor deposition. X-ray photoelectron spectra and Auger electron spectra were employed to analyze the components and chemical structures of Si/GaN. The results indicated that there was nitrogen diffusion from the GaN layer to the Si layer and substitutional N accumulation near the interface, which agreed with carrier concentration obtained from electrical conductivity measurements.