An analytical model for AlGaN/GaN HFET and the electrical characteristics

An new velocity-field analytical model for AlGaN/GaN HFETs is presented which includes the compensation effect. It is in good agreement with Monte Carlo results. We also investigate the electrical characteristics of the devices. The model predicts that the compensation effect could not be neglected when the compensation ratio r>0.6, and the I-V characteristics will fall when the gate voltage V/sub g/ is high enough.