A physical model of the field dependence of two breakdown activation energies for TDDB

The field dependence of two breakdown activation energies for TDDB in ultra thin gate oxide is studied using a double level model of oxygen related donor states under high field stressing. The oxygen related donor generation is due to the high field induced multi-photons. Using a helium-like model, the double donor energies of E/sub c/-0.91eV and E/sub c/-2.00eV can be determined simply. The two zero field breakdown activation energies correspond to the two energy levels of a defect.