Novel fully-depleted SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

Novel strained SiGe-on-insulator (SGOI) pMOSFETs as well as a new fabrication technique of the SGOI substrates are demonstrated. The ultrathin strained SiGe as a channel layer is directly sandwiched by gate oxide and buried oxide layers. The mobility enhancement of 2.3 times higher than the universal mobility has been obtained for the p-MOSFET with a 19 nm-thick Si/sub 0.58/Ge/sub 042/ channel layer, which is formed by high-temperature oxidation of a Si/sub 0.9/Ge/sub 0.1/ layer grown on a Si-on-insulator (SOI) substrates. The concept of fully-depleted SGOI MOSFETs with the simple single-layer structure is promising for scaled SOI p-MOSFETs with high current drive.