1.6 w/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz

In this paper, we report the first GaN HEMT power device to operate at 29 GHz. The 0.2 μm T-gate AlGaN/GaN HEMT with a 120 μm total gate periphery exhibited a pulsed output power of 1.6 W/mm with a gain of 6.7 dB and an associated power aided efficiency of 26% at 29 GHz. The epitaxial layers were grown by MOCVD on SiC.