Thermally stable ultra-thin nitrogen incorporated ZrO/sub 2/ gate dielectric prepared by low temperature oxidation of ZrN

Ultra-thin nitrogen incorporated ZrO/sub 2/ (ZrON) film is successfully prepared by low temperature oxidation of ZrN. Capacitance equivalent thickness (CET) of 15 /spl Aring/ with Jg=1 mA/cm/sup 2/@ Vg=-1 V is demonstrated. There is no increase in CET up to 1000/spl deg/C. Silicide formation at poly-Si/ZrO/sub 2//Si stack at high temperature annealing is also inhibited. In addition, the boron penetration from p+ poly-Si to Si substrate is substantially suppressed.