A new near-infrared-light-emitting diode of monodispersed nanocrystallite silicon

The purpose of this work is to develop a near-infrared-light-emitting diode with active materials of monodispersed Si nanocrystallites that are highly compatible with ULSI technology. The monodispersed Si nanocrystallites were synthesized by laser ablation and subsequent size-classification process. The near-infrared emission was sharp and showed a peak above the band-gap region (position: 1.17 eV, width: 0.15 eV); therefore, it presumably originates from spatial quantum confinement effects of the carriers.