Monolithic fabrication of 2 /spl times/ 2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing

In this letter, we report the fabrication of 2 /spl times/ 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO/sub 2/ quantum-well intermixing technique. The switches have low insertion loss to be about 4-5 dB and extinction ratios up to 26 dB.