He/sup +/-implanted In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/ (/spl lambda//sub g/=1.3 /spl mu/m) tunnel junctions and their application as current blocking layers

Tunnel junctions have attracted a great deal of renewed interests in the field of optoelectronic devices in recent years due to their applications in edge-emitting lasers, short- and long-wavelength VCSELs. In addition to enabling low resistance conduction, tunnel junctions can easily be destroyed by ion-implantation or dopant diffusion, thus forming an effective current blocking layer. This work explores the properties of tunnel junctions formed in In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/ (/spl lambda//sub g/=1.3 /spl mu/m) and their feasibility as current blocking layers in 1.55 /spl mu/m wavelength optoelectronic devices.