1.55 /spl mu/m wavelength GaInAsP/InP distributed feedback lasers with deeply etched first order vertical grating

1.55 /spl mu/m wavelength distributed feedback (DFB) lasers consisting of a first order vertical grating formed on the sidewalls of the high-mesa stripe geometry were realized by a simple electron beam lithography and CH/sub 4//H/sub 2/-RIE etching. The threshold current of 15 mA and the differential quantum efficiency of 55% were obtained for a 370 /spl mu/m long and 3.5 /spl mu/m wide stripe device.