Smart drive of power transistors

A method using feedback techniques that is suitable to drive and protect high-power transistors in commutation is presented. This active protection allows the use of the maximum transistor safe operating area, since it prevents the drain-to-source voltage from rising above a prescribed value that is independent of the working voltage of the power device and of the power load parameters. One additional advantage of this drive technique consists in the reduction of the turn-on time of the MOS transistor due to an inherent increase of the driving current. Other features, such as overcurrent and overtemperature protection, are also included in the drive circuit. An experimental circuit using the method was tested in different conditions, and the results confirm the advantageous features of the feedback technique.<
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