The electrical characteristics of oxide due to processing condition

In order to investigate the effects of various process conditions on the electrical characteristics, we studied the electrical characteristics of the oxide thin film made under various conditions such as temperature, wafer orientation, epi. thickness and resistivity. The breakdown characteristics of oxide were estimated by the dielectric characteristics and the structure measurements for the specimens compared with those of the process temperature. Choosing the electrical characteristic and the pollution level of thin oxide as valuation items, we measured c-v plot, breakdown characteristics. In applying to the low electric field, it does not matter, but in applying to the high electric field, it became serious, if the oxide layer contains micro defects. The thickness traps and the various kinds of ions on the layer interface have a great influence on the characteristic of devices.