Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator

Dynamic compact electrothermal models are developed for silicon carbide (SiC) power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN Schottky and 5000 V SiC PiN diodes. The models are verified for on-state characteristics, temperature dependence and reverse recovery characteristics, di/dt, dv/dt, and temperature dependence.