Injection-locked coherent pulsed IMPATT oscillators with a high stability of RF-parameters

The essential features of power pulsed IMPATT oscillators include variation of diode junction temperature within the pulse width and operation with high pulse bias current density and, as a consequence, the approach of the avalanche resonant diode frequency to the oscillator's operating frequency. These features lead to considerable change in diode RF impedance during the pulse width and, as result, to variation of the output signal amplitude and phase, and thus requirements for high stability of RF parameters cannot be fulfilled for many applications. This paper describes methods for RF parameter stabilization of injection-locked pulsed IMPATT oscillators during a pulse width over a wide locking band used in Science Research Institute "Orion" (Kiev, Ukraine) for developing power pulsed coherent oscillators at an 8-mm wavelength for electronic paramagnetic resonant spectrometers.