Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gate were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.