Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates

InGaAs/AlInAs HEMT structures have been grown on oxide-bonded InGaAs substrates. De-oxidation and growth conditions are developed that enable good electrical properties. The highest electron mobility obtained was 7258 cm/sup 2//V at 300 K. The surface morphology showed undulations. X-ray rocking curve analysis shows differences in lattice constants between the samples grown on control substrates and the oxide-bonded substrates.