A 600-V 10-A trench bipolar junction diode with superior static and dynamic characteristics

In this paper, 600-V, 10-A trench bipolar junction diodes (TBJDs) fabricated utilizing a new self-aligned trench process is characterized and reported. For the first time, the TBJD has experimentally demonstrated, compared to the conventional P-i-N diode, not only superior reverse recovery characteristics, but also lower on-state voltage drops and the unchanged reverse leakage current levels at elevated temperature. The relationship between the diode performance and the design parameters of the TBJD is also discussed in this paper.