Characteristics of metal-LiNbO/sub 3/-Si for a single transistor FRAM

This paper investigated LiNbO/sub 3/ thin films grown directly on p-type Si [100] substrates by 13.56 MHz RF magnetron sputtering system for a single transistor FRAM application. Thin film LiNbO/sub 3/ showed improved characteristics of a low interface trap density, low interaction with Si substrate, and large remanent polarization. Low temperature film growth and post RTA treatments improved the leakage current of the films while keeping other properties almost the same as high substrate temperature grown samples. We learned that the RTA annealed films were changed from amorphous to multicrystalline LiNbO/sub 3/ with [012], [015], [022], and [023] planes. P-E characteristics were studied in conjunction with C-V properties of MFS capacitors. This paper reports the LiNbO/sub 3/ film with the following parameters dielectric constant of /spl epsiv//sub r/=27.9, remanent polarization 2P/sub r/=2.7/spl mu/C/cm/sup 2/, and coercive field E/sub c/=170kV/cm.