The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

N-channel metal oxide semiconductor field effect transistors (MOSFET) using Ta/sub 2/O/sub 5/ gate oxide were fabricated. The I/sub DS/-V/sub DS/ and I/sub DS/-V/sub GS/ characteristics were measured. The electron mobility was 333 cm/sup 2//V-s. The subthreshold swing was 73 mV/dec. The interface trapped charge density, the surface recombination velocity and the minority carrier lifetime measured from gated diodes were 9.5/spl times/10/sup 12/ cm/sup -2/-eV/sup -1/, 780 cm/s and 3/spl times/10/sup -6/ sec, respectively,.