RHEED investigation of MBE growth of ZnSe epilayer on GaAs [111] B

We present a comparative study of ZnSe growth conditions on GaAs [111] B (As-terminated) substrates using reflection high-energy electron diffraction (RHEED). The dynamic changes in RHEED intensity were used to obtain qualitative information about the surface during the growth of ZnSe epilayers. Changes in growth conditions cause a transition from a "wavy growth" mode to a three-dimensional growth mode. An atomic force microscope was used to image the surface morphology. AFM images provided a visual evidence of mound creation on the GaAs [111] B surface.