Study of optical and electrical properties of GaSb/Al/sub x/Ga/sub 1-x/Sb grown by MOCVD

We report the metalorganic chemical vapour deposition (MOCVD) growth conditions and properties of GaSb and Al/sub x/Ga/sub 1-x/Sb in the regime x/spl les/0.25, including the effect of V/III ratio and growth temperature on electrical and optical properties. GaSb and Al/sub x/Ga/sub 1-x/Sb compound layers were grown on GaAs substrate using TMAl, TMGa and TMSb precursors. Growth temperatures in the range of 520/spl deg/C to 680/spl deg/C and V/III ratios between 1 to 5 have been investigated.