Sub-40 nm v-groove MOSFETs

In a previous article, we showed that a V-groove design can be used to achieve sub-0.1 μm MOSFETs. A thick raised source/drain structure of highly n-doped silicon on top of an ultra-thin p/sup s/ilicon channel combines the advantages of low contact resistances with the suppression of short channel effects. Here, we present most recent results on V-groove MOSFETs with a source/drain separation down to L/sub g/= 6 nm exhibiting state of the art electrical characteristics. We therefore demonstrate that the V-groove MOSFET has potential for sub-40 nm operation.