Extension of safe-operating-area by optimizing body-current in submicron LDMOS transistors

We present the extension of Hot-Electron-Limited SOA and Electrical SOA by optimising the two peaks of body current in 20 V LDMOS Transistors. The LDMOS has two peaks of body current and the origin of two peaks can be explained through hot carrier injection phenomenon. The first peak shows the appearance of weakly impact ionization related to the device degradation and the second peak shows the occurrence of snap-back phenomenon predicting device destruction, respectively.