Fast write time and long retention 1T memory

It is desirable to achieve both fast data access time and long data retention time simultaneously. We have developed a 1T PZT/40 Å-Al/sub 2/O/sub 3/ memory to achieve very fast write (program/erase) time <100 ns, years long data retention, and good endurance >10/sup 10/ P/E cycles. The small 1T size is highly competitive with other memory technologies.