A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-/spl mu/m CMOS devices applications

A novel double ion-implant Ti-salicide technology combining As pre-amorphization implant plus Si ion-mixing implant without the additional lithography process has been developed successfully and reported. Based on this technology, the good performances of uniform Ti-silicide formation, low and narrow distribution of sheet resistances both on n/sup +//p/sup +/ poly-gate and source/drain diffusion layers, and lower leakage currents in the n/sup +//p-well and p/sup +//n-well junctions are obtained simultaneously. In addition, excellent behavior of a 0.24-/spl mu/m NMOSFET and PMOSFET fabricated by this technology are also achieved.