Ultrathin ox/nitride gate stack for sub-quarter-micron CMOS devices prepared by RTCVD

The paper gives a short overview of ox/nitride gate stack prepared by rapid thermal chemical vapor deposition (RTCVD) for sub-quarter-micron CMOS process. The main portion is focused on the dissimilar characteristics of different interfacial oxide in ox/nitride gate stack. Post deposition annealing is also investigated including NH/sub 3/ and N/sub 2/O treatment. Excellent improvements are available including lower gate leakage current, comparable driving current, suitable interface density of states and stable gate dielectric reliability.