Low voltage CMOS fully differential active inductor and its application to RF bandpass amplifier design

This paper presents the design of a 1.5 V CMOS fully-differential inductorless RF bandpass amplifier using a 0.35 /spl mu/m n-well CMOS technology. The bandpass amplifier employs a p-channel input cascode transconductor and the newly proposed low-voltage fully-differential active inductor as an active tuned load. HSPICE simulation of the bandpass amplifier operating at a centre frequency of 1 GHz and a quality factor of 50 illustrates that a voltage gain of 50 dB and a noise figure of 4.2 dB can be achieved with a power dissipation of 46 mW from a single 1.5 V power supply voltage.