Extraction of impurity concentration profiles by the DCIV method

The lineshape of the DCIV (Base Current vs Gate Voltage) characteristics is used to extract the spatial variation of the surface impurity concentration in the drain and source extension regions, the drain and source junction regions, and the basewell channel region. Examples are presented to illustrate nanometer spatial resolution of defect enhanced impurity diffusion, nitride barrier against boron penetration through thin gate oxide, and strain-induced interface traps.