Growth of InMnAsSb/InSb heterostructures with mid-infrared light-induced ferromagnetic properties

New diluted magnetic semiconductor InMnAsSb/InSb heterostructures were proposed and grown an InAs substrates by low-temperature molecular beam epitaxy. Raman scattering measurements show that InMnAsSb layer grown on InSb at 250/spl deg/C has higher crystal quality than that grown at 280/spl deg/C. Light-induced ferromagnetic order was observed, for the first time, when these samples were illuminated with the light of wavelengths longer than 2 /spl mu/m. Corresponding to the Raman data, better light-induced ferromagnetic order was for the 250/spl deg/C-grown samples. The long-term preservation of the ferromagnetic order was confirmed even after the light-off.