Influence of electrode width on high-speed performance of traveling-wave electroabsorption modulators

InP/InGaAs traveling-wave electro-absorption modulators for 1.55 /spl mu/m were fabricated with on-chip integrated termination resistors. The influence of the electrode width on their microwave properties and modulation bandwidth is measured and analyzed. Reduction of microwave losses and velocity mismatch can be demonstrated for wider electrodes, offering the potential for modulation bandwidth >100 GHz.