Well number dependence of highly strained GaIn(N)As MQW structures by metalorganic chemical vapor deposition

Highly strained GaInAs/GaAs MQWs (SQW, DQW, TQW) were grown by MOCVD and highly strained GaInNAs/GaAs lasers (SQW, TQW) grown by MOCVD were fabricated to evaluate their characteristics difference by well number. A low threshold current density of 541 A/cm/sup 2/ and a lasing wavelength of 1.276 /spl mu/m were obtained in a 2070 /spl mu/m-cavity length SQW laser. A threshold current density of 1.46 k A/cm/sup 2/ and a lasing wavelength of 1.296 /spl mu/m were obtained in a 1140 /spl mu/m-cavity length TQW laser under pulse operation at room temperature.