An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors

It is shown that the planar metal-semiconductor-metal photodetectors on InGaAs/InP with a strained GaAs top layer are promising candidates for optoelectronic integration of long-wavelength (1.3-1.55 mu m) fiber-optic components, combining speed of response (8.5-GHz bandwidth) with a simple technology (only four processing steps were required for the presented detector). Some low-frequency gain was observed at high bias voltages along with a low-frequency increase in noise above that expected from shot noise.<
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