First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition

The MOCVD growth of InP/InGaAs PNP HBT layers and the successful fabrication and operation at high frequency of devices made on such layers are reported for the first time. The PNP HBTs employed a zinc-doped InP layer as emitter while the base was made with a 500 /spl Aring/ thick n-type InGaAs layer doped at 5/spl times/10/sup 18/ cm/sup -3/. Microwave measurements indicated f/sub T/ of more than 11 GHz at J/sub C/=8.25/spl times/10/sup 4/ A/cm/sup 2/ for these MOCVD-grown InP/InGaAs PNP HBTs.