Thin-film transistors incorporating a thin, high-quality PECVD SiO/sub 2/ gate dielectric

Thin-film transistors (TFTs) have been made that incorporate a thin ( approximately 380 AA), high-quality plasma-enhanced chemical vapor deposition (PECVD) SiO/sub 2/ film as the gate dielectric in a staggered-inverted structure. Threshold voltages and mobilities have been found to be in the range of 1.6-2.4 V and 0.20-0.25 cm/sup 2/ V/sup -1/ s/sup -1/, respectively, where the exact values are dependent on the measurement technique used. Very low gate leakage currents (<10/sup -11/ A) were recorded when measured using a ramped I-V technique, even for electric fields as high as 5*10/sup 6/ V/cm.<
>