Novel monolithic VCSEL devices for datacom applications

We present novel monolithic VCSEL devices for 850 nm and 1300 nm emission wavelength. First we introduce a simple theory to calculate an intracavity QW-monitordiode monolithically integrated within a standard 850 nm VCSEL structure including the responsivity to spontaneous emission. Calculations and experimental results for devices are compared, which are optimized for temperature insensitive responsivities. Then we present new monolithic 1300 nm VCSELs with improved performance. With MBE grown devices having an InGaAsN active region we achieved 1 mW cw-power at room-temperature at a wavelength above 1.3 /spl mu/m.