Preparation of oxide buffers on a cube-textured Ni substrate for coated conductor by CVD

CeO/sub 2/ and NiO films have been grown by metal-organic chemical vapor deposition (MOCVD) on cube-textured Ni substrate. At a lower deposition temperature of 400/spl deg/C, an amorphous film was formed. Deposited CeO/sub 2/ film showed a mixed texture of [100]<001> and [100]<011> orientations. Depending on the deposition condition, the transition from [100]<001> texture to [100]<011> orientation was observed for the CeO/sub 2/ film. The NiO film was deposited at 470/spl deg/C for 10 min. Deposition pressure was 10 Torr and the oxygen partial pressure was 0.91 Torr. The X-ray rocking curve and /spl phi/-scan showed that the NiO film has a bi-axial texture with a [100]<001> orientation. The out-of-plane and the in-plane deviation were measured as 4.2/spl deg/ and 6/spl sim/7/spl deg/ from the FWHM of [200] and [111] planes, respectively.