Gate-induced drain leakage current enhanced by plasma charging damage

Correlation between gate-induced drain leakage (GIDL) current I/sub GIDL/ and plasma charging damage is investigated for p-MOSFETs. I/sub GIDL/ and maximum charge pumping current show the same trend as a function of antenna area ratio (AAR) and cell location. Enhancement of I/sub GIDL/ is mainly attributed to the increase of Si/SiO/sub 2/ interface traps generated in the plasma processes and is not related to the small amount of trapped charge in the oxide.