High-temperature performance of InGaAs-InGaAlAs-InP 1.79-μm diode lasers grown in solid-source molecular-beam epitaxy

1.79-μm InGaAs-InGaAlAs strained-layer quantum-well diode lasers have been fabricated. A characteristic temperature of 72 K has been achieved. At a temperature as high as 100/spl deg/C, a continuous-wave output power of more than 6.5 mW per facet has been demonstrated with lasers using as-cleaved facets as mirrors.