Structural improvement of amorphous silicon using metal-induced crystallization

In this paper, two new techniques are reported to lower the crystallization temperature of amorphous silicon (a-Si) on ordinary glass down to 400/spl deg/C. UV light exposure was used during nickel-induced crystallization, resulting in an improved crystallization rate. Also, the effect of applying an electric field during metal-induced lateral crystallization is studied. A lateral growth of 300 /spl mu/m is observed by annealing the sample at 400/spl deg/C for 30 min, with applying an electric field of 100 V/cm. XRD and SEM are employed to study the morphological structure of the samples.