Implementation of A Differential mm-Wave CMOS SOi Power Amplifier

A mm-wave class AB power amplifier (PA) is implemented in Globalfoundries 45 nm CMOS SOI technology. The PA is designed in the frequency range of 40 to 50 GHz based on a differential stack of triple transistor cells. It uses a total of 12 NMOS transistors and has only been measured in the frequency range of 44 to 50 GHz. It achieves a single-ended saturated output power P
_sat
of 22.2 dBm (~25 dBm differential) and a peak power-added efficiency PAE of 30% at 44 GHz. The overall power performance in the range of 44 GHz to 50 GHz remains acceptable.