Overvoltage self-protection structure of a light-triggered thyristor

Overvoltage self-protection with a slight temperature dependence on triggering temperature was realized for a light-triggered thyristor. This thyristor had a narrow, low concentration p layer in the light-triggered region. This low concentration area was formed by ion implantation. The thyristor was triggered when the depletion layer extended to near the n-emitter. The triggering voltage could be controlled by the ion implantation dose.