Gate reliability comparison of 110 and 100 substrates

We report, for the first time, intrinsic reliability of SiO/sub 2/ grown on 100 and 110 substrates. The tunneling current characteristics and barrier height have been analyzed. Three different processes were used to fabricate 6 nm-7 nm gates. In each case, little difference was observed in the gate oxide reliability for the two substrate orientations. The results are explained in terms of the tunneling current and the barrier height.