Optical diagnostic of silicon carbide based on differential reflectance spectroscopy

Summary form only given. A simple non-destructive method for characterising SiC samples (Lely-crystals, CREE-substrates, and epitaxial films) is presented. The observed ultraviolet differential reflection spectra of SiC samples were compared with a pure Lely-crystal (model sample) to estimate the structural quality of the sample. The method presented is based on a differential study of ultraviolet reflection spectra of SiC films in comparison with a perfect Lely-crystal.