Microwave High-Voltage CBiCJFET Technology for Analog Integrated Circuits

In this paper results of design microwave high-voltage complementary bipolar transistor technology process with complementary junction field-effect transistors (CBiCJFET) are presented. Regimes formation of area of complementary junction field-effect transistors with drain-source breakdown voltage U
_DS
> 36 V and cutoff voltage U
_GS
(off) ~1.5 V are defined. Extension of basis of complementary bipolar technology process is provided with inclusion of 3 extra photolithography operations.