High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes

The solar-blind detection capability of heterostructure diodes employing an i-Al/sub 0.33/Ga/sub 0.67/N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features, such as InGaN quantum wells and delta-doped regions of p-Al/sub 0.33/Ge/sub 0.67/N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude.