49-GHz preamplifier with a transimpedance gain of 52 dB/spl Omega/ using InP HEMTs

We developed a new preamplifier with a transimpedance gain of 52 dB/spl Omega/ and 49 GHz bandwidth using 0.15-/spl mu/m InP based high electron mobility transistors (HEMTs). The preamplifier consists of a lumped element designed transimpedance amplifier for an input stage and a distributed amplifier for a gain stage. A highly stabilized and ultra-broad band distributed amplifier with gain-peaking techniques was successfully designed. This technique provides a preamplifier ultra-broad bandwidth and excellent gain flatness.