An accurate, experimentally verified electron minority carrier mobility model for Si and SiGe

The electron minority mobility in Si and SiGe is extracted from high-field magnetoconductance experiments on SiGe heterojunction bipolar transistors based on a new electron transport model. The transport model is verified by comparison with magnetoresistance experiments for lightly doped Si. After calibrating an empirical parameter of the impurity scattering model against data for highly doped Si, good results are obtained for SiGe without any further fitting.