2-6 GHz GaAs MMIC power amplifier

Design approach and performance of ion-implanted broadband MMIC power amplifier using 0.5 /spl mu/m gate length FET is reported. The lossy matched MMIC amplifier is designed and optimized with nonlinear Root model. The amplifier has better than 3:1 bandwidth, 1 to 1.4 watt CW output power, and greater than 20 percent power-added efficiency (PAE) across the 2-6.7 GHz frequency band. The linear gain is 17 dB with a flatness of 0.75 dB. Input/output VSWRs are better than 2:1. The chip size is 0.1 mm/spl times/2.6 mm/spl times/2.7 mm.