Microwave performance of heterojunction vertical dual carrier field effect transistors and integrated circuits

Since heterojunction transistors have been invented, devices of various materials have been developed with excellent performance such as AlGaAs-GaAs, Si-GeSi, etc. Here, we report a new mode of operation of heterojunction transistors and call it the Heterojunction Vertical Dual Carrier Field Effect Transistor (HVDCFET). The HVDCFET and its integrated circuit form HVDCFEIC have the advantage of field effect transistor operation. The mobility /spl mu/ is q/kT times greater than the diffusion constant D. With the same injection at the source or emitter junction, the drift current will be q/kT times larger than the diffusion current, resulting in a larger drain current by a factor of q/kT for HVDCFET than the collector current for a HBT. HVDCFET and HVDCFEIC have low operation voltage in the range of one volt while the HBT operates at higher voltages. We can also fabricate complementary HVDCFEIC for switching, microwave, analog or SOC systems. The most important advantage of HVDCFET or HVDCFEIC is that we can use the molecular beam epitaxial process to fabricate grown channel lengths of 20 nm and effective channel lengths of 5 to 10 nm.