The dynamic conductance and transconductance in double-gate (gate-all-round) SOI devices

The output conductance of double-gate SOI transistors (DG-MOSFETs) exhibits a dependence versus frequency. This behavior is shown to be related to the loss mechanism due to capture and emission of carriers by interface traps. The interface trap behavior can be represented by an equivalent capacitance C/sub it/ and resistance R/sub it/ model. We have shown that the EKV model combined with SILVACO simulations fully accounts for (i) the pinch-off voltage variation with drain voltage, (ii) the effect of the interface trap density on the output conductance (Vandooren et al., 1999), and (iii) the conductance degradation with total radiation dose. This paper investigates the frequency behavior of the output conductance observed in double-gate MOSFETs. We demonstrate that this behavior can be reproduced by including the frequency properties of interface traps in the EKV model.